SI4850BDY-T1-GE3

Vishay Siliconix

Product No:

SI4850BDY-T1-GE3

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Package:

8-SO

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Description:

MOSFET N-CH 60V 8.4A/11.3A 8SO

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	19.5mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 250µA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	2.5W (Ta), 4.5W (Tc)
Series	TrenchFET® Gen IV
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	8.4A (Ta), 11.3A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI4850