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SI4896DY-T1-GE3

Vishay Siliconix

Product No:

SI4896DY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 80V 6.7A 8SO

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 16.5mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 1.56W (Ta)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 6.7A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number SI4896