Vishay Siliconix
Product No:
SI4896DY-T1-GE3
Manufacturer:
Package:
8-SOIC
Batch:
-
Description:
MOSFET N-CH 80V 6.7A 8SO
Quantity:
Delivery:
Payment:
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 16.5mOhm @ 10A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
Supplier Device Package | 8-SOIC |
Drain to Source Voltage (Vdss) | 80 V |
Power Dissipation (Max) | 1.56W (Ta) |
Series | TrenchFET® |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Technology | MOSFET (Metal Oxide) |
Mfr | Vishay Siliconix |
Current - Continuous Drain (Id) @ 25°C | 6.7A (Ta) |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | SI4896 |