SI5858DU-T1-GE3

Vishay Siliconix

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SI5858DU-T1-GE3

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Package:

PowerPAK® ChipFET™ Single

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Description:

MOSFET N-CH 20V 6A PPAK CHIPFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	39mOhm @ 4.4A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	PowerPAK® ChipFET™ Single
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	2.3W (Ta), 8.3W (Tc)
Series	LITTLE FOOT®
Package / Case	PowerPAK® ChipFET™ Single
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI5858