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SI7116BDN-T1-GE3

Vishay Siliconix

Product No:

SI7116BDN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 40V 18.4A/65A PPAK

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1915 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.4mOhm @ 16A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 5W (Ta), 62.5W (Tc)
Series -
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 18.4A (Ta), 65A (Tc)
Vgs (Max) ±20V
Package Tape & Reel (TR)
Base Product Number SI7116