SI8405DB-T1-E3

Vishay Siliconix

Product No:

SI8405DB-T1-E3

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Package:

4-Microfoot

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Description:

MOSFET P-CH 12V 3.6A 4MICROFOOT

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	55mOhm @ 1A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	950mV @ 250µA
Supplier Device Package	4-Microfoot
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	1.47W (Ta)
Series	TrenchFET®
Package / Case	4-XFBGA, CSPBGA
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	3.6A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI8405