SI8457DB-T1-E1

Vishay Siliconix

Product No:

SI8457DB-T1-E1

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Package:

4-MICRO FOOT® (1.6x1.6)

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Description:

MOSFET P-CH 12V 4MICRO FOOT

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	93 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	19mOhm @ 3A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	4-MICRO FOOT® (1.6x1.6)
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	1.1W (Ta), 2.7W (Tc)
Series	TrenchFET®
Package / Case	4-UFBGA
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	6.5A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI8457