SI8809EDB-T2-E1

Vishay Siliconix

Product No:

SI8809EDB-T2-E1

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Package:

4-Microfoot

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Description:

MOSFET P-CH 20V 1.9A MICROFOOT

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	90mOhm @ 1.5A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	4-Microfoot
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	500mW (Ta)
Series	TrenchFET®
Package / Case	4-XFBGA
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	1.94 (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI8809