SIA4446DJ-T1-GE3

Vishay Siliconix

Product No:

SIA4446DJ-T1-GE3

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PowerPAK® SC-70-6 Dual

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Description:

N-CHANNEL 40 V (D-S) MOSFET POWE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	915 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	11mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA
Supplier Device Package	PowerPAK® SC-70-6 Dual
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	3.5W (Ta), 19.2W (Tc)
Series	TrenchFET®
Package / Case	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 31A (Tc)
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)