SIA477EDJT-T1-GE3

Vishay Siliconix

Product No:

SIA477EDJT-T1-GE3

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Package:

PowerPAK® SC-70-6 Single

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Description:

MOSFET P-CH 12V 12A PPAK SC70-6

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3050 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13mOhm @ 5A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	PowerPAK® SC-70-6 Single
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	19W (Tc)
Series	TrenchFET® Gen III
Package / Case	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SIA477