SIDR402EP-T1-RE3

Vishay Siliconix

Product No:

SIDR402EP-T1-RE3

Manufacturer:

Package:

PowerPAK® SO-8DC

Batch:

Datasheet:

Description:

N-CHANNEL 40 V (D-S) 175C MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	165 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.88mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 250µA
Supplier Device Package	PowerPAK® SO-8DC
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	7.5W (Ta), 150W (Tc)
Series	TrenchFET®
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	65.2A (Ta), 291A (Tc)
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)