SIDR680DP-T1-RE3

Vishay Siliconix

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SIDR680DP-T1-RE3

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PowerPAK® SO-8DC

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Description:

N-CHANNEL 80-V (D-S) MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5150 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.9mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.4V @ 250µA
Supplier Device Package	PowerPAK® SO-8DC
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	32.8A (Ta), 100A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)