SIHA6N65E-E3

Vishay Siliconix

Product No:

SIHA6N65E-E3

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Package:

TO-220 Full Pack

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Description:

MOSFET N-CHANNEL 650V 7A TO220

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220 Full Pack
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	31W (Tc)
Series	E
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHA6