Vishay Siliconix
Product No:
SIHB30N60ET1-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Batch:
-
Description:
N-CHANNEL 600V
Quantity:
Delivery:
Payment:
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 125mOhm @ 15A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Supplier Device Package | D²PAK (TO-263) |
Drain to Source Voltage (Vdss) | 600 V |
Power Dissipation (Max) | 250W (Tc) |
Series | - |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Mfr | Vishay Siliconix |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Vgs (Max) | ±30V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |