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SIHG21N65EF-GE3

Vishay Siliconix

Product No:

SIHG21N65EF-GE3

Manufacturer:

Vishay Siliconix

Package:

TO-247AC

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 650V 21A TO247AC

Quantity:

Delivery:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2322 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-247AC
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 208W (Tc)
Series -
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SIHG21