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SIJ458DP-T1-GE3

Vishay Siliconix

Product No:

SIJ458DP-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 60A PPAK SO-8

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4810 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.2mOhm @ 20A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 5W (Ta), 69.4W (Tc)
Series TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIJ458