SIR510DP-T1-RE3

Vishay Siliconix

Product No:

SIR510DP-T1-RE3

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PowerPAK® SO-8

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Description:

N-CHANNEL 100 V (D-S) MOSFET POW

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4980 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.6mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	PowerPAK® SO-8
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Series	TrenchFET® Gen V
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	31A (Ta), 126A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)