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SIS4608DN-T1-GE3

Vishay Siliconix

Product No:

SIS4608DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

Batch:

-

Datasheet:

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Description:

N-CHANNEL 60 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.8mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® 1212-8
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 3.3W (Ta), 27.1W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 12.4A (Ta), 35.7A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIS4608