SIS776DN-T1-GE3

Vishay Siliconix

Product No:

SIS776DN-T1-GE3

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PowerPAK® 1212-8

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Description:

MOSFET N-CH 30V 35A PPAK1212-8

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Operating Temperature	-50°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.2mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	PowerPAK® 1212-8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Series	SkyFET®, TrenchFET®
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIS776