SIS890DN-T1-GE3

Vishay Siliconix

Product No:

SIS890DN-T1-GE3

Manufacturer:

Package:

PowerPAK® 1212-8

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 30A PPAK1212-8

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	802 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	23.5mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	PowerPAK® 1212-8
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Series	TrenchFET®
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIS890