SISD5300DN-T1-GE3

Vishay Siliconix

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SISD5300DN-T1-GE3

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PowerPAK® 1212-F

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Description:

N-CHANNEL 30 V (D-S) MOSFET POWE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	36.2 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.87mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	PowerPAK® 1212-F
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	5.4W (Ta), 57W (Tc)
Series	TrenchFET®
Package / Case	PowerPAK® 1212-F
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	62A (Ta), 198A (Tc)
Vgs (Max)	+16V, -12V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)