SISHA10DN-T1-GE3

Vishay Siliconix

Product No:

SISHA10DN-T1-GE3

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PowerPAK® 1212-8SH

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Description:

MOSFET N-CH 30V 25A/30A PPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.7mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	3.6W (Ta), 39W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	25A (Ta), 30A (Tc)
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SISHA10