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SISS4402DN-T1-GE3

Vishay Siliconix

Product No:

SISS4402DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

Batch:

-

Datasheet:

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Description:

N-CHANNEL 40 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3850 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.2mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 35.5A (Ta), 128A (Tc)
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISS4402