SISS61DN-T1-GE3

Vishay Siliconix

Product No:

SISS61DN-T1-GE3

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PowerPAK® 1212-8S

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Description:

MOSFET P-CH 20V 30.9/111.9A PPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	8740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	231 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.5mOhm @ 15A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	PowerPAK® 1212-8S
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	5W (Ta), 65.8W (Tc)
Series	TrenchFET® Gen III
Package / Case	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	30.9A (Ta), 111.9A (Tc)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SISS61