SQ2309ES-T1_GE3

Vishay Siliconix

Product No:

SQ2309ES-T1_GE3

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Package:

SOT-23-3 (TO-236)

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Description:

MOSFET P-CH 60V 1.7A TO236

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	8.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	336mOhm @ 3.8A, 10V
Product Status	Last Time Buy
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	2W (Tc)
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SQ2309