SQ2325ES-T1_GE3

Vishay Siliconix

Product No:

SQ2325ES-T1_GE3

Manufacturer:

Package:

SOT-23-3 (TO-236)

Batch:

Datasheet:

Description:

MOSFET P-CH 150V 840MA TO236

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TA)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.77Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	3W (Tc)
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	840mA (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	SQ2325