SQD35N05-26L-GE3

Vishay Siliconix

Product No:

SQD35N05-26L-GE3

Manufacturer:

Package:

TO-252AA

Batch:

Datasheet:

Description:

MOSFET N-CH 55V 30A TO252

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1175 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20mOhm @ 20A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-252AA
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	50W (Tc)
Series	TrenchFET®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SQD35N