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SQJ431AEP-T1_BE3

Vishay Siliconix

Product No:

SQJ431AEP-T1_BE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

-

Datasheet:

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Description:

P-CHANNEL 200-V (D-S) 175C MOSFE

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 305mOhm @ 3.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 68W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)