SQJA26EP-T1_GE3

Vishay Siliconix

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SQJA26EP-T1_GE3

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PowerPAK® SO-8

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Description:

AUTOMOTIVE N-CHANNEL 30 V (D-S)

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9778 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	195 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.77mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	PowerPAK® SO-8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	500W (Tc)
Series	-
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	410A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)