SQM10250E_GE3

Vishay Siliconix

Product No:

SQM10250E_GE3

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Package:

TO-263 (D²Pak)

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Description:

MOSFET N-CH 250V 65A TO263

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	30mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 250µA
Supplier Device Package	TO-263 (D²Pak)
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	375W (Tc)
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SQM10250