SQS415ENW-T1_GE3

Vishay Siliconix

Product No:

SQS415ENW-T1_GE3

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Package:

PowerPAK® 1212-8W

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Description:

MOSFET P-CH 40V 16A PPAK1212-8W

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	4825 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	16.1mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	PowerPAK® 1212-8W
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	62.5W (Tc)
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	PowerPAK® 1212-8W
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SQS415