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SUD35N10-26P-E3

Vishay Siliconix

Product No:

SUD35N10-26P-E3

Manufacturer:

Vishay Siliconix

Package:

TO-252AA

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 100V 35A TO252

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 26mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.4V @ 250µA
Supplier Device Package TO-252AA
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 8.3W (Ta), 83W (Tc)
Series TrenchFET®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Package Tape & Reel (TR)
Base Product Number SUD35