SUP60N06-12P-GE3

Vishay Siliconix

Product No:

SUP60N06-12P-GE3

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Package:

TO-220AB

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Description:

MOSFET N-CH 60V 60A TO220AB

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1970 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	12mOhm @ 30A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	3.25W (Ta), 100W (Tc)
Series	TrenchFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SUP60