Transphorm
Product No:
TP65H300G4LSG-TR
Manufacturer:
Package:
3-PQFN (8x8)
Batch:
-
Description:
GANFET N-CH 650V 6.5A 3PQFN
Quantity:
Delivery:
Payment:
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 8 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 312mOhm @ 5A, 8V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.6V @ 500µA |
Supplier Device Package | 3-PQFN (8x8) |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 21W (Tc) |
Series | - |
Package / Case | 3-PowerDFN |
Technology | GaNFET (Gallium Nitride) |
Mfr | Transphorm |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
Vgs (Max) | ±18V |
Drive Voltage (Max Rds On, Min Rds On) | 8V |
Package | Cut Tape (CT) |
Base Product Number | TP65H300 |