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TP65H300G4LSG-TR

Transphorm

Product No:

TP65H300G4LSG-TR

Manufacturer:

Transphorm

Package:

3-PQFN (8x8)

Batch:

-

Datasheet:

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Description:

GANFET N-CH 650V 6.5A 3PQFN

Quantity:

Delivery:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 9.6 nC @ 8 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 312mOhm @ 5A, 8V
Product Status Active
Vgs(th) (Max) @ Id 2.6V @ 500µA
Supplier Device Package 3-PQFN (8x8)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 21W (Tc)
Series -
Package / Case 3-PowerDFN
Technology GaNFET (Gallium Nitride)
Mfr Transphorm
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Vgs (Max) ±18V
Drive Voltage (Max Rds On, Min Rds On) 8V
Package Cut Tape (CT)
Base Product Number TP65H300