TP65H480G4JSG

Transphorm

Product No:

TP65H480G4JSG

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Package:

2-PQFN (5x6)

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Description:

MOSFET 650V, 480mOhm

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	560mOhm @ 3.4A, 8V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 500µA
Supplier Device Package	2-PQFN (5x6)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	13.2W (Tc)
Series	SuperGaN®
Package / Case	2-PowerTSFN
Technology	GaNFET (Gallium Nitride)
Mfr	Transphorm
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Vgs (Max)	±18V
Drive Voltage (Max Rds On, Min Rds On)	8V
Package	Bulk