TP65H480G4JSGB-TR

Transphorm

Product No:

TP65H480G4JSGB-TR

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Package:

8-PQFN (5x6)

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Description:

GANFET N-CH 650V 3.6A QFN5X6

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	414 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	560mOhm @ 3A, 6V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 500µA
Supplier Device Package	8-PQFN (5x6)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	13.2W (Tc)
Series	SuperGaN®
Package / Case	8-PowerTDFN
Technology	GaNFET (Gallium Nitride)
Mfr	Transphorm
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	6V
Package	Tape & Reel (TR)