2301H

Goford Semiconductor

Product No:

2301H

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Package:

SOT-23-3

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Description:

P30V,RD(MAX)<130M@-4.5V,RD(MAX)<

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	405 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 2.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	125mOhm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	SOT-23-3
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1W (Ta)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)