2N7635-GA

GeneSiC Semiconductor

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2N7635-GA

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Package:

TO-257

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Description:

TRANS SJT 650V 4A TO257

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Operating Temperature	-55°C ~ 225°C (TJ)
FET Feature	-
FET Type	-
Input Capacitance (Ciss) (Max) @ Vds	324 pF @ 35 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	415mOhm @ 4A
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-257
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	47W (Tc)
Series	-
Package / Case	TO-257-3
Technology	SiC (Silicon Carbide Junction Transistor)
Mfr	GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C	4A (Tc) (165°C)
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Bulk