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G3R45MT17D

GeneSiC Semiconductor

Product No:

G3R45MT17D

Manufacturer:

GeneSiC Semiconductor

Package:

TO-247-3

Batch:

-

Datasheet:

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Description:

SIC MOSFET N-CH 61A TO247-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4523 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 182 nC @ 15 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 58mOhm @ 40A, 15V
Product Status Active
Vgs(th) (Max) @ Id 2.7V @ 8mA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 1700 V
Power Dissipation (Max) 438W (Tc)
Series G3R™
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Mfr GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C 61A (Tc)
Vgs (Max) ±15V
Drive Voltage (Max Rds On, Min Rds On) 15V
Package Tube
Base Product Number G3R45