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G2R50MT33K

GeneSiC Semiconductor

Product No:

G2R50MT33K

Manufacturer:

GeneSiC Semiconductor

Package:

TO-247-4

Batch:

-

Datasheet:

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Description:

3300V 50M TO-247-4 SIC MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature Standard
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 7301 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 340 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 10mA (Typ)
Supplier Device Package TO-247-4
Drain to Source Voltage (Vdss) 3300 V
Power Dissipation (Max) 536W (Tc)
Series G2R™
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Mfr GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube