GA08JT17-247

GeneSiC Semiconductor

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GA08JT17-247

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Package:

TO-247AB

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TRANS SJT 1700V 8A TO247AB

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	-
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	250mOhm @ 8A
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-247AB
Drain to Source Voltage (Vdss)	1700 V
Power Dissipation (Max)	48W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiC (Silicon Carbide Junction Transistor)
Mfr	GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C	8A (Tc) (90°C)
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube