630A

Goford Semiconductor

Product No:

630A

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Package:

TO-252

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Description:

N200V,RD(MAX)<280M@10V,VTH1V~3V,

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	509 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	11.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	280mOhm @ 4.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	83W
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	11A
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)