G2012

Goford Semiconductor

Product No:

G2012

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Package:

6-DFN (2x2)

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Description:

N20V,RD(MAX)<12M@4.5V,RD(MAX)<18

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1255 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12mOhm @ 5A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	6-DFN (2x2)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.5W (Tc)
Series	-
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)