G250N03IE

Goford Semiconductor

Product No:

G250N03IE

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Package:

SOT-23-6L

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Description:

N30V,ESD 5.3A,RD<25M@10V,VTH0.5V

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	573 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	9.1 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	25mOhm @ 4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.3V @ 250µA
Supplier Device Package	SOT-23-6L
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.4W (Tc)
Series	-
Package / Case	SOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	5.3A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Package	Tape & Reel (TR)