G50N03J

Goford Semiconductor

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G50N03J

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Package:

TO-251

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Description:

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	16.6 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	7mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-251
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	48W (Tc)
Series	-
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube