GT025N06AM6

Goford Semiconductor

Product No:

GT025N06AM6

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Package:

TO263-6

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Description:

N60V,170A,RD<2.0M@10V,VTH1.2V~2.

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5058 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO263-6
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	215W (Tc)
Series	-
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	170A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)