GT080N10T

Goford Semiconductor

Product No:

GT080N10T

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TO-220

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Description:

N100V, 70A,RD<8M@10V,VTH1.0V~3.0

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2257 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	100W (Tc)
Series	GT
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube