GT6K2P10IH

Goford Semiconductor

Product No:

GT6K2P10IH

Manufacturer:

Package:

SOT-23-3

Batch:

Datasheet:

Description:

MOSFET P-CH 100V 1A SOT-23

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	253 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	670mOhm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	SOT-23-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.4W (Tc)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)