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GT700P08D3

Goford Semiconductor

Product No:

GT700P08D3

Manufacturer:

Goford Semiconductor

Package:

8-DFN (3.15x3.05)

Batch:

-

Datasheet:

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Description:

P-80V,-16A,RD(MAX)<75M@-10V,VTH-

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1591 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 75mOhm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package 8-DFN (3.15x3.05)
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 69W (Tc)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)