TP65H150G4LSG

Transphorm

Product No:

TP65H150G4LSG

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Package:

2-PQFN (8x8)

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Description:

GAN FET N-CH 650V PQFN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	598 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	180mOhm @ 8.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.8V @ 500µA
Supplier Device Package	2-PQFN (8x8)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	52W (Tc)
Series	-
Package / Case	2-PowerTSFN
Technology	GaNFET (Gallium Nitride)
Mfr	Transphorm
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Cut Tape (CT)
Base Product Number	TP65H150