BSC091N03MSCGATMA1

Infineon Technologies

Product No:

BSC091N03MSCGATMA1

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Package:

PG-TDSON-8-6

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Description:

POWER FIELD-EFFECT TRANSISTOR, 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9.1mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	PG-TDSON-8-6
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.5W (Ta), 28W (Tc)
Series	SIPMOS®
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 44A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk